BFT93W is a PNP type transistor produced by Philips Semiconductors. It is suitable for wideband applications below 2 GHz.
This document is a product specification datasheet for the Philips BFT93W, a silicon PNP transistor designed for wideband applications up to 4 GHz. The device features gold metallization for reliability and comes in an SOT323 (S-mini) plastic package.
The datasheet provides comprehensive electrical characteristics including DC current gain, transition frequency, maximum unilateral power gain, and noise figure under various conditions. It also details limiting values such as collector-base voltage, total power dissipation up to 93 °C, and junction temperature limits.
| Package type | SOT323 (S-mini) |
|---|---|
| Transistor type | Silicon PNP transistor |
| Collector-base voltage (VcBo) | -15 V |
| Collector-emitter voltage (VcEo) | -12 V |
| Collector current (Ic) | -50 mA |
| Total power dissipation (Ptot) | 300 mW |
| Transition frequency (ft) | 4 GHz |
| Maximum unilateral power gain (Gum) | 15.5 dB |
The maximum junction temperature (Tj) is 150 °C.
Yes, it is a PNP 4 GHz wideband transistor intended as a general purpose PIN transistor for wideband applications up to 2 GHz.