This document describes the features and characteristics of the BFG11W/X NPN 2 GHz power transistor, including high power gain, high efficiency, and small size discrete power amplifier. It is suitable for common emitter class-AB operation at 1.9 GHz in handheld radio equipment such as DECT, PHS, and as a driver for DCS 1800.
The Philips BFG11W/X is an NPN silicon planar epitaxial transistor designed for high power gain and efficiency in common-emitter class-AB operation. It is specifically intended for use in handheld radio equipment at 1.9 GHz, such as DECT and PHS systems, and serves as a driver for DCS 1800 applications. The device is encapsulated in a small size, 4-pin dual-emitter SOT343 package with gold metallization to ensure excellent reliability.
| Operating Frequency | 1.9 GHz |
|---|---|
| Collector-Base Voltage | 20 V |
| Collector-Emitter Voltage | 8 V |
| Collector Current | 500 mA |
| Total Power Dissipation | 760 mW |
| Package Type | SOT343 |
The maximum DC collector current is 500 mA.
The storage temperature range is from -65 °C to +150 °C.