BFG11W/X is a NPN 2GHz power transistor produced by Philips. It has the advantages of high power gain, high efficiency, small size and so on. It is mainly used in 1.9GHz frequency band common RF scenarios such as DECT and PHS.
The Philips BFG11W/X is an NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. It is designed for high power gain and high efficiency in linear and non-linear operations, specifically targeting 1.9 GHz applications such as DECT and PHS handheld radio equipment.
| Package type | 4-pin dual-emitter SOT343 |
|---|---|
| Operating frequency | 1.9 GHz |
| Collector-base voltage | 20 V |
| Collector-emitter voltage | 8 V |
| Emitter-base voltage | 2.5 V |
| Collector current | 500 mA |
| Total power dissipation | 760 mW |
| Storage temperature | -65 to +150 °C |
| Junction temperature | 175 °C |
| Collector capacitance | 5 pF |
The maximum DC collector current is 500 mA.
The transistor is designed for an operating area of 1.9 GHz.