This data sheet provides detailed information on Philips Semiconductors BFG11; BFG11/X NPN 2 GHz RF power transistor, including features, applications, pin definitions, performance parameters and more.
This document is a product specification datasheet for the Philips BFG11 and BFG11/X series. These are NPN silicon planar epitaxial transistors designed as small size discrete power amplifiers operating up to 2 GHz, specifically optimized for common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.
The datasheet provides comprehensive technical data including limiting values such as collector-base voltage and total power dissipation, thermal characteristics like junction-to-soldering point resistance, and electrical characteristics including breakdown voltages and DC current gain. It also includes application information with typical RF performance graphs and SPICE parameters for circuit simulation.
| Operating Frequency | 1.9 GHz |
|---|---|
| Package Type | 4-pin dual-emitter SOT 143 |
| Collector-Base Voltage (Max) | 20 V |
| Collector-Emitter Voltage (Max) | 8 V |
| Emitter-Base Voltage (Max) | 2.5 V |
| Collector Current (DC) (Max) | 500 mA |
| Junction Temperature (Max) | 175 °C |