This document describes the features and characteristics of Philips Semiconductors' BFG11 and BFG11/X models, including high power gain, high efficiency, and small size discrete power amplifiers. The product is suitable for common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.
This datasheet describes the BFG11 and BFG11/X, which are NPN silicon planar epitaxial transistors designed for common emitter class-AB operation. These devices feature high power gain and efficiency with a small size discrete power amplifier design encapsulated in a 4-pin dual-emitter SOT 143 package.
The document provides detailed technical specifications including limiting values, thermal characteristics, and electrical parameters such as collector capacitance and DC current gain. It also includes application information for RF performance at 1.9 GHz, SPICE model parameters, and test circuit details.
| Operating Frequency | 1.9 GHz |
|---|---|
| Package Type | SOT 143 |
| Collector-Base Voltage (Max) | 20 V |
| Collector-Emitter Voltage (Max) | 8 V |
| Emitter-Base Voltage (Max) | 2.5 V |
| Collector Current (DC) (Max) | 500 mA |
| Storage Temperature Range | -65 to +150 °C |