Key facts
- Brand
- Philips
- Model
- BSH205
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-09
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Philips BSH205 MOS Transistor Product Specification
This document is a product specification datasheet for the Philips BSH205, a P-channel enhancement mode MOS transistor designed for battery-powered applications and high-speed digital interfacing. The device features a very low threshold voltage and fast switching capabilities, supplied in a subminiature SOT23 surface-mount package.
The datasheet provides comprehensive technical data including limiting values, electrical characteristics such as drain-source breakdown voltage and on-state resistance, and reverse diode characteristics. It also includes graphical representations of power dissipation, safe operating areas, and capacitance curves, along with mechanical dimensions for the SOT23 package.
Philips BSH205 specifications
| Drain-source voltage | -12 V |
|---|---|
| Drain current (DC) | -0.75 A |
| Total power dissipation | 0.417 W |
| Storage & operating temperature | -55 to 150 °C |
All Philips BSH205 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the threshold voltage of the BSH205?
The device has a very low threshold voltage, with a typical gate threshold voltage ranging from -0.4 V to -0.68 V at 25°C.
What is the maximum pulsed drain current?
The maximum pulsed drain current (peak value) is -3 A at 25°C.
What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current at 25 °C is –0.75 A.
What package is the BSH205 supplied in?
The BSH205 is supplied in a SOT‑23 surface‑mount package.