The BSH205 MOS transistor is a P-channel enhancement mode MOS transistor produced by Philips Semiconductors. It has a very low threshold voltage, fast switching speed, logic level compatibility, and submicrometer package, making it ideal for battery powered applications and high speed digital interfacing.
The Philips BSH205 is a P‑channel enhancement mode MOSFET supplied in a SOT‑23 surface‑mount package. It features a very low threshold voltage, logic‑level compatibility, and fast switching, making it suitable for battery‑powered and high‑speed digital applications.
The document provides detailed electrical characteristics, limiting values, mechanical dimensions, and definitions of the data‑sheet status. It also includes application notes, reverse‑diode specifications, and safety information.
| Threshold voltage (Vpg) | -12 V |
|---|---|
| Drain current (DC) @ 25°C | -0.75 A |
| Total power dissipation @ 25°C | 0.417 W |
| Package type | SOT‑23 |
| Gate‑source threshold voltage (typical) | -0.4 V |
The maximum continuous drain current at 25 °C is –0.75 A.
The BSH205 is supplied in a SOT‑23 surface‑mount package.
The total power dissipation rating at 25 °C is 0.417 W.