BSH205 is a low threshold voltage, fast switching P-channel enhancement mode MOS transistor from Philips Semiconductors. It is suitable for battery powered applications and high speed digital interfacing.
This document is a product specification datasheet for the Philips BSH205, a P-channel enhancement mode MOS transistor designed for battery-powered applications and high-speed digital interfacing. The device features a very low threshold voltage and fast switching capabilities, supplied in a subminiature SOT23 surface-mount package.
The datasheet provides comprehensive technical data including limiting values, electrical characteristics such as drain-source breakdown voltage and on-state resistance, and reverse diode characteristics. It also includes graphical representations of power dissipation, safe operating areas, and capacitance curves, along with mechanical dimensions for the SOT23 package.
| Drain-source voltage | -12 V |
|---|---|
| Drain current (DC) | -0.75 A |
| Total power dissipation | 0.417 W |
| Storage & operating temperature | -55 to 150 °C |
The device has a very low threshold voltage, with a typical gate threshold voltage ranging from -0.4 V to -0.68 V at 25°C.
The maximum pulsed drain current (peak value) is -3 A at 25°C.