Philips BFQ136 NPN Transistor Datasheet

BFQ136 is a high-performance NPN 4GHz wideband transistor with extremely high output voltage capabilities and is primarily intended for use in the final stages of UHF amplifiers.


Philips BFQ136 NPN Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
76 KB
Published
06 July, 2012
Updated
30 September, 2023
Model
BFQ136
MD5 checksum
9C84770F7534D9E340679A8F2418DCF8

About this manual

The document is a product specification datasheet for the Philips BFQ136, an NPN transistor housed in a four-lead SOT122A ceramic package. It features diffused emitter-ballasting resistors and gold sandwich metallization to ensure high reliability and excellent temperature profiles.

The device is primarily intended for use as a final stage in UHF amplifiers. Key electrical characteristics include a maximum collector-emitter voltage of 18 V, a DC collector current capability of up to 600 mA, and a transition frequency (fr) of 4 GHz at 500 MHz.

What's inside

  • Description
  • Quick Reference Data
  • Limiting Values
  • Thermal Resistance
  • Characteristics
  • Test Circuits
  • Package Outline

Specifications

Collector-Emitter Voltage (VCEO)18 V
DC Collector Current (IC)600 mA
Total Power Dissipation (Ptot)9 W
Transition Frequency (fr)4.0 GHz
Maximum Unilateral Power Gain (Gum)12.5 dB
Output Voltage (Vo)2.5 V

Frequently asked questions

What is the primary application of this transistor?

It is primarily intended for final stages in UHF amplifiers.

What is the maximum total power dissipation rating?

The maximum total power dissipation is 9 W up to a temperature of 100 °C.

What are the dimensions of the package?

The studded ceramic package has a height (H) of 27.56 mm and a length (L) of 11.82 mm.

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