The BFG92A/X is a NPN 5 GHz wideband transistor from Philips Semiconductors. It features high power gain, low noise figure, and gold metallization ensures excellent reliability. It is used in wideband applications in the UHF and microwave range.
The document is a product specification for the BFG92A/X, an NPN wideband transistor designed for UHF and microwave applications. It features high power gain and low noise figure in a 4-pin SOT143B plastic package with gold metallization.
Key electrical parameters include a maximum collector-base voltage of 20 V, a transition frequency (fT) up to 5 GHz, and a maximum unilateral power gain of 16 dB at 1 GHz. The datasheet includes typical performance curves for current gain, noise figure, and S-parameters.
| Transition frequency (fT) | 5 GHz |
|---|
The device can be stored between -65 °C and 150 °C.
The maximum total power dissipation is 400 mW when the temperature is below 60 °C.
The maximum DC collector current is 25 mA.
The maximum junction temperature is 175 °C.