Key facts
- Brand
- STMicroelectronics
- Model
- STGW20NB60H
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-08
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STMicroelectronics STGW20NB60HD PowerMESH IGBT Datasheet
This document describes the STGW20NB60HD, an advanced N-channel IGBT from STMicroelectronics featuring PowerMESH technology and a co-packaged Turboswitch™ antiparallel diode. The device is optimized for high-frequency applications operating below 120kHz.
Read onlineSTMicroelectronics STGW20NB60H specifications
| Collector-Emitter Voltage | 600 V |
|---|---|
| Gate-Emitter Voltage | + 20 V |
| Collector Current (continuous) at Tj = 25 °C | 40 A |
| Total Dissipation at Tj = 25 °C | 150 W |
| Thermal Resistance Junction-case | Max 0.83 °C/W |
Source: STMicroelectronics STGW20NB60HD PowerMESH IGBT Datasheet
All STMicroelectronics STGW20NB60H documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous collector current at 25 °C?
The maximum continuous collector current at 25 °C is 40 A.
From: STMicroelectronics STGW20NB60HD PowerMESH IGBT Datasheet
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150 °C.
From: STMicroelectronics STGW20NB60HD PowerMESH IGBT Datasheet
What are the main applications for the STGW20NB60H?
The device is designed for high frequency motor controls, welding equipment, and SMPS and PFC in both hard switch and resonant topologies.
From: STMicroelectronics STGW20NB60H PowerMESH IGBT Datasheet
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150 °C.
From: STMicroelectronics STGW20NB60H PowerMESH IGBT Datasheet