Key facts
- Brand
- STMicroelectronics
- Model
- STB20NM50
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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STMicroelectronics STP20NM50FD/STB20NM50FD-1 FDmesh Power MOSFET Datasheet
This document is a technical datasheet for the STP20NM50FD and STB20NM50FD-1 N-channel power MOSFETs. These devices feature an intrinsic fast-recovery body diode (FDmesh™ technology) designed to reduce on-resistance and improve switching speeds, making them suitable for bridge topologies like ZVS phase-shift converters in SMPS and welding equipment.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, thermal data, avalanche capabilities, and dynamic parameters such as gate charge and capacitance. It also includes detailed mechanical dimensions for both the TO-220 and PAK (TO-262) packages.
All STMicroelectronics STB20NM50 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for this MOSFET?
They are recommended for bridge topologies, in particular ZVS phase-shift converters for SMPS and welding equipment.
From: STMicroelectronics STP20NM50FD/STB20NM50FD-1 FDmesh Power MOSFET Datasheet
What is the maximum junction temperature?
The maximum operating junction temperature is 150 °C.
From: STMicroelectronics STP20NM50FD/STB20NM50FD-1 FDmesh Power MOSFET Datasheet
What are the typical applications for this MOSFET?
This family is suitable for increasing power density of high voltage converters to allow system miniaturization and higher efficiencies.
From: ST STB20NM50/STB20NM50-1/STP20NM50/STP20NM50FP handbook
What is the maximum total power dissipation at 25°C for the TO-220FP package?
The maximum total power dissipation is 45 W for the TO-220FP package at 25°C.
From: ST STB20NM50/STB20NM50-1/STP20NM50/STP20NM50FP handbook