Key facts
- Brand
- STMicroelectronics
- Model
- VNN3NV04
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-08
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STMicroelectronics VNN3NV04P-E/VNS3NV04P-E OMNIFET II Datasheet
The VNN3NV04P-E and VNS3NV04P-E are monolithic devices from STMicroelectronics designed in vIPower MO-3 Technology. They are intended for replacement of standard Power MOSFETs in DC up to 50 kHz applications. These devices feature built-in protection mechanisms including thermal shutdown, linear current limitation, and overvoltage clamping to operate safely in harsh environments.
Read onlineSTMicroelectronics VNN3NV04 specifications
| Reverse DC output current | -5.5 A |
|---|---|
| Total dissipation (SOT-223) | 8 W |
| Operating junction temperature | Internally limited |
| Storage temperature range | -55 to 150 °C |
| Drain current limit (Typ) | 5 A |
All STMicroelectronics VNN3NV04 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum operating junction temperature?
The operating junction temperature is internally limited, with a storage temperature range of -55 to 150 °C.
From: STMicroelectronics VNN3NV04P-E/VNS3NV04P-E OMNIFET II Datasheet
Does this device include built-in protection?
Yes, the device includes built-in thermal shutdown, linear current limitation, and overvoltage clamp protection.
From: STMicroelectronics VNN3NV04P-E/VNS3NV04P-E OMNIFET II Datasheet
What is the maximum operating junction temperature?
The device has an internally limited operating junction temperature.
Does this MOSFET have built-in protection features?
Yes, it includes thermal shutdown, linear current limitation, and overvoltage clamp to protect the chip.