STGW20NB60HD is an N-channel power switch device produced by STMicroelectronics. It integrates PowerMESH IGBT and TurboSwitch diodes, with high input impedance, low on-voltage drop, high current capability, low switching losses and other characteristics. It is widely used in high frequency motor controls, welding equipment, SMPS and PFC etc.
This document describes the STGW20NB60HD, an advanced N-channel IGBT from STMicroelectronics featuring PowerMESH technology and a co-packaged Turboswitch™ antiparallel diode. The device is optimized for high-frequency applications operating below 120kHz.
| Collector-Emitter Voltage | 600 V |
|---|---|
| Gate-Emitter Voltage | + 20 V |
| Collector Current (continuous) at Tj = 25 °C | 40 A |
| Total Dissipation at Tj = 25 °C | 150 W |
| Thermal Resistance Junction-case | Max 0.83 °C/W |
The maximum continuous collector current at 25 °C is 40 A.
The maximum operating junction temperature is 150 °C.
The typical collector-emitter saturation voltage is 2.8 V.