Key facts
- Brand
- STMicroelectronics
- Model
- STGW20NC60VD
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-08
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STMicroelectronics STGW20NC60VD IGBT Datasheet
Datasheet 11 pages · 229 KB · EN
This document provides technical specifications for the STGW20NC60VD, an N-Channel IGBT featuring PowerMESH technology optimized for high-frequency applications up to 50 kHz. The device is housed in a TO-247 package and includes an antiparallel diode with ultra-fast recovery characteristics.
Read onlineSTMicroelectronics STGW20NC60VD specifications
| Collector Current (continuous) at 25°C | 60 A |
|---|---|
| Collector Current (continuous) at 100°C | 30 A |
| Package Type | TO-247 |
| Total Dissipation at Tc = 25°C | 200 W |
| Storage Temperature | -55 to 150 °C |
All STMicroelectronics STGW20NC60VD documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current at 25°C?
The maximum continuous collector current at 25°C is 60 A.
What is the maximum continuous collector current for this IGBT at 25°C?
The maximum continuous collector current at 25°C is 60 A.
What is the maximum continuous collector current at 25°C?
The device supports a maximum continuous collector current of 60 A when operating at 25°C.
What is the total power dissipation rating at 25°C?
The maximum total power dissipation for this device is rated at 200 W when the case temperature is 25°C.