Key facts
- Brand
- STMicroelectronics
- Model
- STGD3NB60K
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-08
Start here
ST STGD3NB60KD handbook
This document is a technical datasheet for the STD3NB60KD, an N-channel 3A - 600V PowerMESH™ IGBT housed in a DPAK package. The device features short circuit proof capability and is co-packaged with a TurboSwitch™ antiparallel diode.
Read onlineSTMicroelectronics STGD3NB60K specifications
| Collector Current (continuous) at Tc = 25°C | 6 A |
|---|---|
| Collector Current (pulsed) | 24 A |
| Short Circuit Withstand Time | 10 us |
| Total Dissipation at To = 25°C | 35 W |
| Storage Temperature Range | -65 to 150 °C |
Source: ST STGD3NB60KD handbook
All STMicroelectronics STGD3NB60K documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous collector current for this IGBT at a case temperature of 25°C?
The maximum continuous collector current is 6 A when the case temperature is 25°C.
From: ST STGD3NB60KD handbook
What is the maximum collector-emitter voltage rating for the STD3NB60KD?
The maximum collector-emitter voltage rating is 600 V.
From: ST STGD3NB60KD handbook
What are the applications for the STGP3NB60K IGBT?
These IGBTs are optimized for high-frequency motor controls and SMPS and PFC in both hard switching and resonant topologies.
From: ST STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD handbook
What is the maximum collector-emitter voltage rating for these IGBTs?
The device supports a maximum collector-emitter voltage of 600 V.
From: ST STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD handbook