Key facts
- Brand
- Fairchild
- Model
- FQPF2N80
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQPF2N80 N-Channel MOSFET Datasheet
This document describes the Fairchild FQPF2N80, a high-efficiency switch-mode power supply component produced using proprietary DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses in avalanche and commutation modes.
The datasheet provides absolute maximum ratings, electrical characteristics, typical characteristics graphs, test circuit diagrams, package dimensions for the TO-220F case, and trademark information.
Fairchild FQPF2N80 specifications
| Drain-Source Voltage (V_DSS) | 800 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 1.5 A |
| Power Dissipation (Tg = 25°C) | 35 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220F |
All Fairchild FQPF2N80 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-source voltage?
The maximum drain-source voltage is 800 V.
Is this device avalanche tested?
Yes, the devices are 100% avalanche tested.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 800 V.
What continuous drain current can the FQPF2N80 handle at 25 °C?
It can conduct up to 15 A continuously at a case temperature of 25 °C.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 800 V.
What is the typical gate charge of the FQPF2N80?
The typical gate charge is 12 nC.