Key facts
- Brand
- Fairchild
- Model
- FQPF3N25
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF3N25 250V N-Channel MOSFET Datasheet
The FQPF3N25 is an N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology, optimized for low on‑state resistance and fast switching. It is intended for high‑efficiency DC/DC converters and switch‑mode power supplies.
Key specifications include a 250 V drain‑source rating, 23 A continuous drain current at 25 °C, low gate charge of 4 nC, and a typical on‑resistance of 2.22 Ω at VGS = 10 V. Thermal resistance is 0.463 °C/W (junction‑to‑case) and the device can dissipate up to 27 W. Package type is TO‑220F.
Fairchild FQPF3N25 specifications
| Drain‑Source Voltage (VDS) | 250 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 23 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) | 2.22 Ω @ VGS=10 V |
| Typical Gate Charge (Qg) | 4.0 nC |
| Power Dissipation (PD) | 27 W @ 25 °C |
All Fairchild FQPF3N25 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQPF3N25?
The device is rated for a maximum drain‑source voltage of 250 V.
What is the typical gate charge of this MOSFET?
The typical gate charge is 4.0 nC.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 250 V.
What is the typical on‑resistance of the FQPF3N25?
Typical on‑resistance is 2.22 mΩ when VGS = 10 V.