Key facts
- Brand
- Fairchild
- Model
- FQPF2N60C
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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User ManualFAIRCHILD FQP2N60C/FQPF2N60C 600V N-Channel MOSFET Manual
FAIRCHILD FQP2N60C/FQPF2N60C 600V N-Channel MOSFET Manual
User Manual
FQP2N60C/FQPF2N60C is a 2.0A, 600V N-Channel MOSFET produced by Fairchild. It has features such as low RDS(on), low gate charge and low Crss, and is suitable for applications such as high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
Read onlineFairchild FQPF2N60C specifications
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 2.0 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) | 4.72 mΩ @VAG=10 V |
| Typical Gate Charge (Qg) | 8.5 nC |
| Thermal Resistance, Junction‑to‑Case | 2.32 °C/W |
All Fairchild FQPF2N60C documents by type
Application Note 1
How to use the product for one specific task, with worked examples.
User Manual 1
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Questions answered in these manuals
What is the maximum drain‑source voltage rating?
The MOSFET is rated for a maximum drain‑source voltage of 600 V.
What is the typical gate charge of the device?
The typical gate charge is 8.5 nC.