FQPF2N80 is an 800V N-channel MOSFET with low on-state resistance, low gate charge, low gate-source capacitance, fast switching speed and 100% avalanche tested, which is suitable for high efficiency switch mode power supply.
The FQPF2N80 is an N‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology, optimized for low on‑state resistance, fast switching, and high‑energy avalanche capability. It is intended for high‑efficiency switch‑mode power supplies and other high‑voltage applications.
The document lists absolute maximum ratings, detailed electrical characteristics, typical performance curves, and test circuit waveforms. Package information for the TO‑220F case and thermal characteristics are also provided, along with trademark, disclaimer, and product status details.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 15 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| On‑Resistance (RDS(on)) @ VGS=10 V | 6.38 mΩ |
| Total Gate Charge (Qg) | 15 nC |
| Power Dissipation (PD) @ 25 °C | 35 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 3.57 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
The device is rated for a maximum drain‑source voltage of 800 V.
It can conduct up to 15 A continuously at a case temperature of 25 °C.
The typical total gate charge is about 15 nC.
The MOSFET is supplied in a TO‑220F package.