FQPF2N80 is a 800V N-channel MOSFET produced by Fairchild. Its features are: 1.5A, 800V, RDS(on) = 6.3Ω @VGS = 10 V, low gate charge (typical 12 nC), low Crss (typical 5.5 pF), fast switching, 100% avalanche tested, improved dv/dt capability.
This document describes the Fairchild FQPF2N80, a high-efficiency switch-mode power supply component produced using proprietary DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses in avalanche and commutation modes.
The datasheet provides absolute maximum ratings, electrical characteristics, typical characteristics graphs, test circuit diagrams, package dimensions for the TO-220F case, and trademark information.
| Drain-Source Voltage (V_DSS) | 800 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 1.5 A |
| Power Dissipation (Tg = 25°C) | 35 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220F |
The maximum drain-source voltage is 800 V.
Yes, the devices are 100% avalanche tested.