Key facts
- Brand
- Fairchild
- Model
- FQPF1P50
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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User ManualFAIRCHILD FQPF1P50 500V P-Channel MOSFET Manual
Fairchild FQPF1P50 specifications
| Drain‑Source Voltage (V_DSS) | -500 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -1.03 A |
| Pulsed Drain Current (I_D(pulse)) | -4.12 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Total Gate Charge (Q_g) | 11 nC (typical) |
| Power Dissipation (P_D) at 25 °C | 28 W |
| Package | TO‑220F |
All Fairchild FQPF1P50 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
User Manual 1
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Questions answered in these manuals
What is the maximum drain‑source voltage?
The device can withstand a drain‑source voltage of -500 V.
Is the FQPF1P50 avalanche tested?
Yes, it is 100% avalanche tested.