Key facts
- Brand
- Fairchild
- Model
- FQPF2P25
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF2P25 250V P-Channel MOSFET Datasheet
The FQPF2P25 is a P‑Channel enhancement mode power MOSFET designed for high‑efficiency DC/DC converters. It features low gate charge (typical 6.5 nC), low output capacitance (typical 6.5 pF), fast switching, and 100 % avalanche testing for reliable operation under high‑energy pulses.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and package dimensions (TO‑220F). It also includes trademark, disclaimer, and product‑status information from Fairchild Semiconductor.
Fairchild FQPF2P25 specifications
| Drain‑Source Voltage (VDS) | -250 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | -1.8 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) at 25 °C | 32 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 3.9 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
All Fairchild FQPF2P25 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage of the FQPF2P25?
The device is rated for a maximum drain‑source voltage of -250 V.
What continuous drain current can the FQPF2P25 handle at 25 °C?
It can conduct up to -1.8 A continuously at a case temperature of 25 °C.
What is the maximum continuous drain current?
The device can handle a continuous drain current of -1.8 A at a case temperature of 25 °C.
What package does the FQPF2P25 use?
It is supplied in a TO‑220F package.