Key facts
- Brand
- Fairchild
- Model
- FQPF2NA90
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF2NA90 900V N-Channel MOSFET Datasheet
The FQPF2NA90 is a 900 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, fast switching, and robust avalanche capability.
Key features include a continuous drain current of 17 A at 25 °C, a gate‑source rating of +30 V, typical on‑resistance of 5‑8 mΩ at Vgs = 10 V, low gate charge (≈15 nC), and low output capacitance. Thermal resistance values are 3.2 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient). The device is supplied in a TO‑220F package.
Fairchild FQPF2NA90 specifications
| Drain-Source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 17 A |
| Gate-Source Voltage (VGS) Rating | +30 V |
| Typical On‑Resistance (RDS(on)) | 5‑8 mΩ @ VGS=10 V |
| Thermal Resistance, Junction‑to‑Case | 3.2 °C·W |
| Thermal Resistance, Junction‑to‑Ambient | 62.5 °C·W |
| Gate Charge (Qg) | Typical 15 nC |
| Reverse Transfer Capacitance (Crss) | Typical 6.5 pF |
| Avalanche Rating | 100 % avalanche tested |
All Fairchild FQPF2NA90 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage of the FQPF2NA90?
The device is rated for a maximum drain‑source voltage of 900 V.
What continuous drain current can the FQPF2NA90 handle at 25 °C?
It can conduct up to 17 A continuously at a junction temperature of 25 °C.
What is the maximum drain‑source voltage rating?
The FQPF2NA90 is rated for a maximum drain‑source voltage of 900 V.
What continuous drain current can the device handle at 25 °C?
It can conduct up to 17 A continuously at a case temperature of 25 °C.