Key facts
- Brand
- Fairchild
- Model
- FQPF2N70
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQPF2N70 N-Channel MOSFET Datasheet
This document provides design specifications and electrical characteristics for the FQPF2N70, an N-channel MOSFET produced using Fairchild's proprietary planar stripe DMOS technology. The device is optimized to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
Read onlineFairchild FQPF2N70 specifications
| Drain-Source Voltage (V_DSS) | 700 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 2.0 A |
| On-Resistance (Rds(on)) | 6.38 Ω @ Vgs = 10 V |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220F |
All Fairchild FQPF2N70 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum single pulsed avalanche energy rating?
The device can withstand a single pulsed avalanche energy of up to 140 mJ.
What is the maximum operating and storage temperature range?
The device operates and stores within a temperature range of -55 to +150 °C.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 700 V.
What is the typical on‑resistance of the FQPF2N70?
Typical on‑resistance is 6.38 mΩ when V_GS = 10 V.
What is the maximum drain‑source voltage for the FQPF2N70?
The device can withstand up to 700 V between drain and source.
What continuous drain current can the FQPF2N70 handle at 25 °C?
It is rated for a continuous drain current of 2 A at 25 °C.