Key facts
- Brand
- Fairchild
- Model
- FQPF1N50
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF1N50 N-Channel MOSFET Datasheet
The FQPF1N50 is a 500 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, power‑factor correction, and electronic lamp ballast applications.
Key specifications include a continuous drain current of 0.9 A at 25 °C, a pulsed drain current rating of 3.6 A, a gate‑source voltage rating of ±30 V, and a power dissipation of 16 W. The device is supplied in a TO‑220F package with thermal resistance values of 7.81 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient). Detailed electrical, switching, and diode characteristics are provided along with test circuit diagrams.
Fairchild FQPF1N50 specifications
| Drain-Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) @ 25°C | 0.9 A |
| Pulsed Drain Current (I_D) (Note 1) | 3.6 A |
| Gate-Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) @ 25°C | 16 W |
| Junction-to-Case Thermal Resistance (RθJC) | 7.81 °C·W |
| Junction-to-Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Typical Gate Charge (Q_g) | 4.0 nC |
All Fairchild FQPF1N50 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQPF1N50?
The maximum drain‑source voltage is 500 V.
What is the continuous drain current at 25 °C?
The continuous drain current at 25 °C is 0.9 A.
What is the maximum drain‑source voltage for the FQPF1N50?
The device is rated for a maximum drain‑source voltage of 500 V.
What is the typical on‑resistance of the FQPF1N50 at VGS = 10 V?
Typical on‑resistance is about 9 mΩ when the gate voltage is 10 V.