Key facts
- Brand
- Fairchild
- Model
- FQPF2N90
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF2N90 900V N-Channel MOSFET Datasheet
The FQPF2N90 is a 900 V N‑channel enhancement‑mode power MOSFET fabricated with Fairchild's planar stripe DMOS technology. It is designed for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for high‑efficiency switch‑mode power supplies.
Key specifications include a 900 V drain‑source breakdown voltage, 14 A continuous drain current at 25 °C, low gate charge (typical 12 nC), and a TO‑220F package with detailed thermal resistance values. The datasheet also contains typical characteristic curves, test circuit diagrams, and safety notices.
Fairchild FQPF2N90 specifications
| Drain‑Source Voltage (V_DSS) | 900 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 14 A |
| Pulsed Drain Current (I_D) (Note 1) | 5.6 A |
| Gate Charge (Q_G) typical | 12 nC |
| Power Dissipation (P_D) at 25 °C | 35 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 3.57 °C·W |
| Operating Temperature Range | -55 °C to +150 °C |
All Fairchild FQPF2N90 documents by type
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating of the FQPF2N90?
The device is rated for a maximum drain‑source voltage of 900 V.
What continuous drain current can the FQPF2N90 handle at 25 °C?
It can conduct up to 14 A continuously at a case temperature of 25 °C.