Key facts
- Brand
- Fairchild
- Model
- FQPF20N06
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQPF20N06 60V N-Channel MOSFET Datasheet
Datasheet 8 pages · 654 KB · EN
This document is a datasheet for the Fairchild Semiconductor FQPF20N06, a 60V N-Channel enhancement mode power field effect transistor. The device utilizes the company's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for low voltage applications including automotive systems, DC/DC converters, and portable battery-operated products.
Read onlineFairchild FQPF20N06 specifications
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (25°C) | 15 A |
| On-Resistance | 0.06 Ω |
| Maximum Junction Temperature | 175 °C |
| Package Type | TO-220F |
All Fairchild FQPF20N06 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum junction temperature rating?
The maximum junction temperature rating is 175 °C.
Is the device avalanche tested?
Yes, the device is 100% avalanche tested.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 60 V.
How much continuous drain current can the FQPF20N06 handle at 25 °C?
It can handle up to 15 A continuous drain current at 25 °C.