FQPF2N80 is an 800V N-Channel MOSFET power field effect transistor produced using Fairchild's proprietary DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability. Suitable for high efficiency switch mode power supply.
The FQPF2N80 is an N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology, optimized for low on‑state resistance and high‑efficiency switch‑mode power supplies. It offers a 800 V drain‑source rating, 1.5 A gate charge, and fast switching performance.
Key specifications include a continuous drain current of 15 A at 25 °C, a typical gate charge of 12 nC, input capacitance between 425‑550 pF, and an on‑resistance of about 6.38 mΩ at Vgs = 10 V. The device is supplied in a TO‑220F package and is rated for operation from –55 °C to +150 °C.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 15 A |
| Typical Gate Charge (Qg) | 12 nC |
| Input Capacitance (Ciss) | 425‑550 pF |
| On‑Resistance (RDS(on)) | 6.38 mΩ @ VGS=10 V |
The device is rated for a maximum drain‑source voltage of 800 V.
The typical gate charge is 12 nC.
It can handle a continuous drain current of 15 A at 25 °C.