This document describes the features and characteristics of the FQPF2N70 QFET TM FQPF2N70 700V N-Channel MOSFET, including low on-state resistance, superior switching performance, and ability to withstand high energy pulse in the avalanche and commutation mode. Suitable for high efficiency switch mode power supply.
This document provides design specifications and electrical characteristics for the FQPF2N70, an N-channel MOSFET produced using Fairchild's proprietary planar stripe DMOS technology. The device is optimized to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
| Drain-Source Voltage (V_DSS) | 700 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 2.0 A |
| On-Resistance (Rds(on)) | 6.38 Ω @ Vgs = 10 V |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220F |
The device can withstand a single pulsed avalanche energy of up to 140 mJ.
The device operates and stores within a temperature range of -55 to +150 °C.