FQPF2N70 is a 2.0A, 700V, RDS(on) = 6.3Ω @VGS = 10V N-Channel MOSFET with low gate charge (typical 9.0 nC), low Crss (typical 5.0 pF), fast switching and improved dv/dt capability.
The FQPF2N70 is a 700 V N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, low gate charge, and fast switching performance.
Key electrical specifications include a 700 V drain‑source breakdown voltage, 2 A continuous drain current at 25 °C, 8 A pulsed drain current, ±30 V gate‑source rating, and a typical on‑resistance of 6.38 mΩ at VGS = 10 V. The device is supplied in a TO‑220F package with thermal resistance of 4.46 °C·W (junction‑to‑case).
| Drain‑Source Voltage (V_DSS) | 700 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 2.0 A |
| Pulsed Drain Current | 8.0 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| On‑Resistance (R_DS(on)) typical | 6.38 mΩ @ VGS=10 V |
| Power Dissipation (P_D) @ 25 °C | 28 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 4.46 °C·W |
The device can withstand up to 700 V between drain and source.
It is rated for a continuous drain current of 2 A at 25 °C.
The MOSFET is supplied in a TO‑220F package.