FQPF2N70 is a 700V N-channel enhancement mode MOSFET produced by Fairchild. It features 2.0A continuous current, 700V maximum drain-source voltage, low gate capacitance and fast switching speed.
The FQPF2N70 MOSFET is an N‑Channel enhancement mode power transistor fabricated with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance and fast switching while tolerating high‑energy avalanche pulses.
Key features include a continuous drain current of 2 A (1.3 A at 100 °C), pulsed drain current of 8 A, low gate charge (~9 nC), low output capacitance (~5 pF), and a typical on‑resistance of 6.38 mΩ at VGS = 10 V. The device is supplied in a TO‑220F package and is rated for 700 V drain‑source breakdown voltage.
| Drain‑Source Voltage (V_DSS) | 700 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 2.0 A |
| Pulsed Drain Current | 8.0 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| On‑Resistance (R_DS(on)) typical | 6.38 mΩ @ V_GS=10 V |
| Total Gate Charge (Q_G) | 8.1 nC |
| Power Dissipation (P_D) @ 25 °C | 28 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 4.46 °C·W |
| Package | TO‑220F |
The device is rated for a maximum drain‑source voltage of 700 V.
Typical on‑resistance is 6.38 mΩ when V_GS = 10 V.
The total gate charge is approximately 8.1 nC.
The MOSFET is supplied in a TO‑220F package.