Key facts
- Brand
- Fairchild
- Model
- FQT7N10
- Industry
- Industrial
- Documents
- 4
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQT7N10 100V N-Channel MOSFET Datasheet
This document describes the Fairchild FQT7N10, an N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings for drain-source voltage (100V) and continuous drain current (17A at 25°C). It details typical characteristics such as on-resistance, gate charge, capacitance, and switching times. The document also includes test circuit diagrams, package dimensions for the SOT-223 case, and trademark information.
Fairchild FQT7N10 specifications
| Drain-Source Voltage (Voss) | 100 V |
|---|---|
| Continuous Drain Current at 25°C | 17 A |
| Power Dissipation at 25°C | 2.0 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOT-223 |
All Fairchild FQT7N10 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical gate charge for this MOSFET?
The typical total gate charge (Qg) is 5.8 nC.
What are the recommended applications for this device?
It is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
What is the maximum drain‑source voltage for the FQT7N10?
The device is rated for a maximum drain‑source voltage of 100 V.
What is the typical gate charge of the FQT7N10?
The typical gate charge is about 5.8 nC.
What is the maximum drain‑source voltage of the FQT7N10?
The device is rated for a maximum drain‑source voltage of 100 V.
What is the typical on‑resistance of the FQT7N10?
The typical on‑resistance is about 0.352 Ω when VGS is 10 V.