Datasheet
The FQT7N10 100V N-Channel MOSFET is a power field effect transistor produced by Fairchild. It has low gate charge, low drain-source capacitance, fast switching, and improved dv/dt capability.
Datasheet
FQT7N10 is a 100V N-channel MOSFET manufactured by Fairchild. It features low on-state resistance, low gate charge, low Crss, fast switching and improved dv/dt capability. It is suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.
User Manual
FQT7N10 is a 1.7A, 100V N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It has the characteristics of low on-state resistance, high switching speed and high anti-surge capability. This device is very suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.
User Manual
FQT7N10 is a 100V N-Channel MOSFET from Fairchild Semiconductor. The device has a continuous current of 1.7A and a maximum drain-source voltage of 100V. It features low on-state resistance, low gate charge, fast switching and improved dv/dt capability. The device is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters and DC motor control.
