Key facts
- Brand
- Fairchild
- Model
- FQT7N10L
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQT7N10L 100V Logic N-Channel MOSFET Datasheet
The document describes the Fairchild FQT7N10L, an N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. This device is optimized to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses in avalanche and commutation modes.
Read onlineFairchild FQT7N10L specifications
| Drain-Source Voltage (VDSS) | 100 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 1.7 A |
| On-Resistance (RDS(on)) @ VGS = 10V | 0.35 Ω |
| Total Gate Charge (Typical) | 4.6 nC |
| Reverse Transfer Capacitance (Crss) Typ | 12 pF |
Source: Fairchild FQT7N10L 100V Logic N-Channel MOSFET Datasheet
All Fairchild FQT7N10L documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current for this MOSFET at a case temperature of 25°C?
The device supports a continuous drain current of 1.7 A when the case temperature is 25°C.
From: Fairchild FQT7N10L 100V Logic N-Channel MOSFET Datasheet
What are the operating and storage temperature ranges for this component?
The device operates and can be stored within a temperature range of -55 to +150 °C.
From: Fairchild FQT7N10L 100V Logic N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 100 V.
From: Fairchild FQT7N10L 100V Logic N-Channel MOSFET Datasheet
What package type does the FQT7N10L use?
It is supplied in an SOT‑223 surface‑mount package.
From: Fairchild FQT7N10L 100V Logic N-Channel MOSFET Datasheet