Key facts
- Brand
- Fairchild
- Model
- FQT5N20
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
Start here
User ManualFAIRCHILD FQT5N20 200V N-Channel MOSFET Manual
Fairchild FQT5N20 specifications
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 1.0 A |
| Pulsed Drain Current (I_DM) | 4.0 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) @ 25 °C | 25 W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 50 °C/W |
| Total Gate Charge (Q_G) | 6.0 nC |
| Reverse Transfer Capacitance (C_rss) | 6‑8 pF |
All Fairchild FQT5N20 documents by type
User Manual 2
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQT5N20?
The device is rated for a maximum drain‑source voltage of 200 V.
How much continuous drain current can the FQT5N20 handle at 25 °C?
It can conduct up to 1.0 A continuously at a junction temperature of 25 °C.