The FQT7N10 100V N-Channel MOSFET is a power field effect transistor produced by Fairchild. It has low gate charge, low drain-source capacitance, fast switching, and improved dv/dt capability.
This document describes the Fairchild FQT7N10, an N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings for drain-source voltage (100V) and continuous drain current (17A at 25°C). It details typical characteristics such as on-resistance, gate charge, capacitance, and switching times. The document also includes test circuit diagrams, package dimensions for the SOT-223 case, and trademark information.
| Drain-Source Voltage (Voss) | 100 V |
|---|---|
| Continuous Drain Current at 25°C | 17 A |
| Power Dissipation at 25°C | 2.0 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOT-223 |
The typical total gate charge (Qg) is 5.8 nC.
It is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.