Key facts
- Brand
- Fairchild
- Model
- FQT4N25
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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DatasheetFAIRCHILD FQT4N25 250V N-Channel MOSFET handbook
Fairchild FQT4N25 specifications
| Drain‑Source Voltage (VDS) | 250 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 0.83 A |
| Pulsed Drain Current (ID) (max) | 3.3 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Total Gate Charge (Qg) | typical 4.3 nC |
| Input Capacitance (Ciss) | 155‑200 pF |
| Output Capacitance (Coss) | 35‑45 pF |
| Reverse Transfer Capacitance (Crss) | 48‑65 pF |
| Power Dissipation (PD) @ 25 °C | 25 W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 50 °C/W |
| On‑Resistance (RDS(on)) | typical 1.75‑1.88 mΩ |
| Package | SOT‑223 |
All Fairchild FQT4N25 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage of the FQT4N25?
The device is rated for a maximum drain‑source voltage of 250 V.
What continuous drain current can the FQT4N25 handle at 25 °C?
It can conduct up to 0.83 A continuously at a junction temperature of 25 °C.
What is the maximum drain‑source voltage of the FQT4N25?
The maximum drain‑source voltage is 250 V.
What is the typical gate charge for this MOSFET?
The typical gate charge is 4.3 nC.