Key facts
- Brand
- Fairchild
- Model
- FQT4N20
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
Start here
Fairchild FQT4N20 200V N-Channel MOSFET Datasheet
The FQT4N20 is an N‑Channel enhancement mode power MOSFET designed for high‑efficiency switching applications such as DC‑DC converters, SMPS, UPS, and motor control. It features low on‑resistance, low gate charge (typical 5 nC) and fast switching performance.
Key specifications include a 200 V drain‑source rating, 0.85 A continuous drain current at 25 °C, 3.4 A pulsed current, and a thermal resistance of 57 °C/W. The device is supplied in an SOT‑223 package and includes detailed test circuit diagrams for gate charge and diode recovery characteristics.
Fairchild FQT4N20 specifications
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 0.85 A |
| Pulsed Drain Current (I_D) (Note 1) | 3.4 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) @ 25 °C | 2.2 W |
| Thermal Resistance, Junction‑to‑Ambient | 57 °C/W |
| Input Capacitance (C_iss) | 170‑220 pF |
| Output Capacitance (C_oss) | 35‑45 pF |
| Reverse Transfer Capacitance (C_rss) | 5‑7 pF |
| Total Gate Charge (Q_g) | 5.0‑6.5 nC |
All Fairchild FQT4N20 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQT4N20?
The device is rated for a maximum drain‑source voltage of 200 V.
What continuous drain current can the FQT4N20 handle at 25 °C?
It can conduct up to 0.85 A continuously at a junction temperature of 25 °C.
What is the maximum drain‑source voltage rating?
The FQT4N20 is rated for a maximum drain‑source voltage of 200 V.
What temperature range can the device operate in?
It operates from –55 °C to +150 °C.