Key facts
- Brand
- Fairchild
- Model
- FQT5P10
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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DatasheetFAIRCHILD FQT5P10 100V P-Channel MOSFET handbook
FAIRCHILD FQT5P10 100V P-Channel MOSFET handbook
Datasheet
FQT5P10 100V P-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor Corporation. It features low on-state resistance, superior switching performance and high energy pulse withstand capability. It is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.
Read onlineFairchild FQT5P10 specifications
| Drain‑Source Voltage (V_DSS) | -100 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -1.0 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| On‑Resistance (R_DS(on)) typical | 1.05 Ω at VGS = -10 V |
| Typical Gate Charge (Qg) | 6.3 nC |
| Power Dissipation (P_D) at 25 °C | 2.0 W |
All Fairchild FQT5P10 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current?
The maximum continuous drain current is -1.0 A at 25 °C.
What is the typical gate charge of the FQT5P10?
The typical gate charge is 6.3 nC.
What is the maximum drain‑source voltage for the FQT5P10?
The device is rated for a maximum drain‑source voltage of –100 V.
What continuous drain current can the FQT5P10 handle at 25 °C?
It can conduct up to –1.0 A continuously at a junction temperature of 25 °C.