Key facts
- Brand
- Fairchild
- Model
- FQT5P10
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
Start here
Fairchild FQT5P10 P-Channel MOSFET Datasheet
This document describes the Fairchild FQT5P10, a P-Channel enhancement mode power MOSFET produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as audio amplifiers, DC/DC converters, and motor control.
Read onlineFairchild FQT5P10 specifications
| Drain-Source Voltage | -100 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | -1.0 A |
| Power Dissipation (Tg = 25°C) | 2.0 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | SOT-223 |
All Fairchild FQT5P10 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the continuous drain current ratings at different temperatures?
The device supports a continuous drain current of -1.0 A at 25°C and -0.8 A at 70°C.
What is the maximum single pulsed avalanche energy?
The FQT5P10 can withstand a single pulsed avalanche energy of 55 mJ.
What is the maximum continuous drain current?
The maximum continuous drain current is -1.0 A at 25 °C.
What is the typical gate charge of the FQT5P10?
The typical gate charge is 6.3 nC.
What is the maximum drain‑source voltage for the FQT5P10?
The device is rated for a maximum drain‑source voltage of –100 V.
What continuous drain current can the FQT5P10 handle at 25 °C?
It can conduct up to –1.0 A continuously at a junction temperature of 25 °C.