Key facts
- Brand
- Fairchild
- Model
- FQT2P25
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQT2P25 P-Channel MOSFET Datasheet
The FQT2P25 is a 250 V P‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy pulse handling, making it suitable for efficient DC/DC converter designs.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and test circuit diagrams. Package information (SOT‑223) and thermal specifications are also included, along with trademark and product status notices.
Fairchild FQT2P25 specifications
| Drain‑Source Voltage (VDS) | -250 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | -0.55 A |
| Continuous Drain Current (ID) @ 100 °C | -0.35 A |
| Pulsed Drain Current (ID) (max) | -2.2 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) @ 25 °C | 25 W |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 50 °C/W |
| Operating Temperature Range | -55 °C to +150 °C |
| Typical Gate Charge (Qg) | 6.5 nC |
| Output Capacitance (Coss) | 55 pF |
| Reverse Transfer Capacitance (Crss) | 8.5 pF |
| Turn‑On Delay Time | 25 ns |
| Turn‑On Rise Time | 90 ns |
| Turn‑Off Delay Time | 35 ns |
| Turn‑Off Fall Time | 60 ns |
| Package Type | SOT‑223 |
All Fairchild FQT2P25 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating?
The FQT2P25 is rated for a maximum drain‑source voltage of -250 V.
What continuous drain current can the device handle at 25 °C?
It can conduct a continuous drain current of -0.55 A at 25 °C.
What is the maximum drain‑source voltage rating?
The device is rated for a drain‑source voltage of –250 V.
What is the typical gate charge of the FQT2P25?
The typical gate charge is 6.5 nC.