Key facts
- Brand
- Fairchild
- Model
- FQT3P20
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQT3P20 P-Channel MOSFET Datasheet
The document describes the Fairchild FQT3P20, a 200V P-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. It is designed to minimize on-state resistance and provide superior switching performance for high efficiency DC/DC converters.
Key specifications include a continuous drain current of -0.67A at 25°C, a breakdown voltage of -200V, and a power dissipation of 25W. The device features low gate charge (typical 6.0 nC) and is available in the SOT-223 package.
Fairchild FQT3P20 specifications
| Drain-Source Voltage | -200 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | -0.67 A |
| Power Dissipation (Tg = 25°C) | 25 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | SOT-223 |
All Fairchild FQT3P20 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current at 25°C?
The maximum continuous drain current is -0.67 A when the temperature is 25°C.
What is the maximum drain-source voltage rating?
The maximum drain-source voltage is -200 V.
What is the maximum continuous drain current rating?
The device can handle a continuous drain current of -0.67 A at 25 °C.
What is the typical gate charge of the FQT3P20?
The typical gate charge is 6.0 nC.
What is the maximum drain‑source voltage rating?
The FQT3P20 is rated for a maximum drain‑source voltage of –200 V.
What is the typical gate charge of the device?
The typical gate charge is 6.0 nC.