Key facts
- Brand
- Fairchild
- Model
- FQT3P20
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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FAIRCHILD FQT3P20 200V P-Channel MOSFET handbook
This document describes the FQT3P20 QFET TM FQT3P20 200V P-Channel MOSFET from Fairchild Semiconductor Corporation. These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
Read onlineFairchild FQT3P20 specifications
| Drain‑Source Voltage (V_DSS) | -200 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -0.67 A |
| Continuous Drain Current (I_D) at 70 °C | -0.53 A |
| Pulsed Drain Current | -2.7 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) at 25 °C | 25 W |
| Thermal Resistance, Junction‑to‑Ambient | 50 °C/W |
| Operating Temperature Range | -55 °C to +150 °C |
| Typical Gate Charge | 6.0 nC (typical) |
| Package Type | SOT‑223 |
All Fairchild FQT3P20 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current rating?
The device can handle a continuous drain current of -0.67 A at 25 °C.
What is the typical gate charge of the FQT3P20?
The typical gate charge is 6.0 nC.
What is the maximum drain‑source voltage rating?
The FQT3P20 is rated for a maximum drain‑source voltage of –200 V.
What is the typical gate charge of the device?
The typical gate charge is 6.0 nC.