Key facts
- Brand
- Fairchild
- Model
- FQT13N06
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQT13N06 N-Channel MOSFET Datasheet
This document is a technical datasheet for the Fairchild Semiconductor FQT13N06, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
Key specifications include a drain-source voltage rating of 60V, a continuous drain current of 2.8A at 25°C, and an on-resistance (RDS(on)) of 0.14Ω. The datasheet provides detailed electrical characteristics, typical characteristic curves, test circuit diagrams for switching parameters, and package dimensions for the SOT-223 form factor.
Fairchild FQT13N06 specifications
| Continuous Drain Current (ID) @ TC=25°C | 2.8 A |
|---|---|
| On-Resistance (RDS(on)) @ VGS=10V, ID=1.4A | 0.14 Ω |
| Gate-Source Voltage (VGSS) | ± 25 V |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOT-223 |
All Fairchild FQT13N06 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
Is this MOSFET suitable for DC/DC converters?
Yes, the document states these devices are well suited for low voltage applications such as DC/DC converters.
What is the typical total gate charge?
The typical total gate charge (Qg) is 5.8 nC.
What is the maximum drain‑source voltage of the FQT13N06?
The maximum drain‑source voltage is 60 V.
Which package does the FQT13N06 use?
It is supplied in an SOT‑223 surface‑mount package.