FQT7N10 is a 1.7A, 100V N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It has the characteristics of low on-state resistance, high switching speed and high anti-surge capability. This device is very suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.
The FQT7N10 is an N‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, high‑efficiency DC/DC converters, and DC motor drives.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and package dimensions (SOT‑223). Key parameters include a 100 V drain‑source rating, low gate charge (≈5.8 nC), and fast switching times, making it suitable for high‑speed switching applications.
| Drain‑Source Voltage (V_DSS) | 100 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 17 A |
| Pulsed Drain Current (I_D) (Note 1) | 6.8 A |
| Gate‑Source Voltage (V_GS) | +25 V |
| On‑Resistance (R_DS(on)) | 0.352 Ω @ V_GS=10 V |
| Gate Charge (Q_g) | 5.8 nC (typical) |
| Power Dissipation (P_D) @ 25 °C | 2.0 W |
| Operating Temperature Range | -55 °C to +150 °C |
| Junction‑to‑Ambient Thermal Resistance | 62.5 °C/W |
The device is rated for a maximum drain‑source voltage of 100 V.
The typical gate charge is about 5.8 nC.
It is supplied in an SOT‑223 surface‑mount package.
The continuous drain current at 25 °C is specified as 17 A.