FQT7N10 is a 100V N-Channel MOSFET from Fairchild Semiconductor. The device has a continuous current of 1.7A and a maximum drain-source voltage of 100V. It features low on-state resistance, low gate charge, fast switching and improved dv/dt capability. The device is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters and DC motor control.
The FQT7N10 is an N‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is optimized for low‑voltage applications such as audio amplifiers, high‑efficiency DC/DC converters, and DC motor drives, offering low gate charge and low output capacitance for fast switching.
Key specifications include a 100 V drain‑source rating, continuous drain current up to 1.36 A at 70 °C, on‑resistance as low as 0.35 Ω at VGS=10 V, and a power dissipation of 2 W at 25 °C. The device is supplied in an SOT‑223 package and the datasheet provides extensive test circuits and characteristic curves for design verification.
| Drain‑Source Voltage (V_DSS) | 100 V |
|---|---|
| Continuous Drain Current (I_D) @ 70 °C | 1.36 A |
| Power Dissipation (P_D) @ 25 °C | 2.0 W |
| On‑Resistance (R_DS(on)) | 0.352 Ω @ VGS=10 V |
| Gate Charge (Qg) | 5.8 nC (typical) |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
| Package | SOT‑223 |
The device is rated for a maximum drain‑source voltage of 100 V.
The typical on‑resistance is about 0.352 Ω when VGS is 10 V.
It can dissipate up to 2.0 W at a case temperature of 25 °C.
The MOSFET is supplied in an SOT‑223 surface‑mount package.