FQT5P10 100V P-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor Corporation. It features low on-state resistance, superior switching performance and high energy pulse withstand capability. It is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.
This document describes the Fairchild FQT5P10, a P-Channel enhancement mode power MOSFET produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as audio amplifiers, DC/DC converters, and motor control.
| Drain-Source Voltage | -100 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | -1.0 A |
| Power Dissipation (Tg = 25°C) | 2.0 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | SOT-223 |
The device supports a continuous drain current of -1.0 A at 25°C and -0.8 A at 70°C.
The FQT5P10 can withstand a single pulsed avalanche energy of 55 mJ.