FQT5P10 is a P-Channel MOSFET produced using Fairchild's proprietary planar stripe DMOS technology. This device has low on-state resistance, superior switching performance, and can withstand high energy pulses. It is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
The FQT5P10 is a P‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage uses such as audio amplifiers, high‑efficiency DC‑DC converters, and DC motor control, offering minimized on‑state resistance and fast switching.
Key features include a continuous drain current of -1.0 A, a drain‑source voltage rating of -100 V, low gate charge (typical 6.3 nC), low output capacitance (typical 18 pF), and a typical on‑resistance of 1.05 Ω at VGS = -10 V. The device is supplied in an SOT‑223 package and includes detailed electrical and thermal characteristics.
| Drain‑Source Voltage (V_DSS) | -100 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -1.0 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| On‑Resistance (R_DS(on)) typical | 1.05 Ω at VGS = -10 V |
| Typical Gate Charge (Qg) | 6.3 nC |
| Power Dissipation (P_D) at 25 °C | 2.0 W |
The maximum continuous drain current is -1.0 A at 25 °C.
The typical gate charge is 6.3 nC.
It is supplied in an SOT‑223 package.
The device can dissipate up to 2.0 W at 25 °C.