This document describes the FQT3P20 QFET TM FQT3P20 200V P-Channel MOSFET from Fairchild Semiconductor Corporation. These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
The document describes the Fairchild FQT3P20, a 200V P-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. It is designed to minimize on-state resistance and provide superior switching performance for high efficiency DC/DC converters.
Key specifications include a continuous drain current of -0.67A at 25°C, a breakdown voltage of -200V, and a power dissipation of 25W. The device features low gate charge (typical 6.0 nC) and is available in the SOT-223 package.
| Drain-Source Voltage | -200 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | -0.67 A |
| Power Dissipation (Tg = 25°C) | 25 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | SOT-223 |
The maximum continuous drain current is -0.67 A when the temperature is 25°C.
The maximum drain-source voltage is -200 V.
The device operates and stores between -55°C and +150°C.