FQT3P20 is a 200V P-channel MOSFET with low on-state resistance, high switching speed, low gate charge and low Crss, suitable for high efficiency switching DC/DC converters.
The FQT3P20 is a 200 V P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching in DC/DC converters and offers low on‑state resistance, fast switching, and improved dv/dt capability.
The document lists absolute maximum ratings, detailed electrical characteristics, typical performance curves, and test circuit diagrams. Package information (SOT‑223) and thermal data are also included, along with trademark and disclaimer notices.
| Drain‑Source Voltage (VDS) | -200 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | -0.67 A |
| Pulsed Drain Current (ID) (Note 1) | -2.7 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) at 25 °C | 25 W |
| Thermal Resistance, Junction‑to‑Ambient | 50 °C/W |
| Typical Gate Charge (Qg) | 6.0 nC |
The FQT3P20 is rated for a maximum drain‑source voltage of –200 V.
The typical gate charge is 6.0 nC.
It is supplied in an SOT‑223 surface‑mount package.
The device can dissipate up to 25 W at a junction temperature of 25 °C.