This document describes the features and characteristics of the FQT3P20, a 200V P-Channel MOSFET power field effect transistor. It has low on-state resistance, superior switching performance, and the ability to withstand high energy pulses.
The FQT3P20 is a P‑Channel enhancement mode power MOSFET produced using Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching DC/DC converters and offers low gate charge and low output capacitance.
Key specifications include a -200 V drain‑source rating, -0.67 A continuous drain current at 25 °C, -2.7 A pulsed current, +30 V gate‑source rating, 25 W power dissipation, and a thermal resistance of 50 °C/W. The device is supplied in an SOT‑223 package.
| Drain‑Source Voltage (V_DSS) | -200 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -0.67 A |
| Continuous Drain Current (I_D) at 70 °C | -0.53 A |
| Pulsed Drain Current | -2.7 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) at 25 °C | 25 W |
| Thermal Resistance, Junction‑to‑Ambient | 50 °C/W |
| Operating Temperature Range | -55 °C to +150 °C |
| Typical Gate Charge | 6.0 nC (typical) |
| Package Type | SOT‑223 |
The device can handle a continuous drain current of -0.67 A at 25 °C.
The typical gate charge is 6.0 nC.
It is supplied in an SOT‑223 surface‑mount package.
The MOSFET is rated for a maximum drain‑source voltage of -200 V.