Key facts
- Brand
- Fairchild
- Model
- FQPF19N20
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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DatasheetFAIRCHILD FQPF19N20 200V N-Channel MOSFET handbook
Fairchild FQPF19N20 specifications
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (Id) @ 25 °C | 11.8 A |
| Pulsed Drain Current (Id) (Note 1) | 48 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (Rds(on)) @ Vgs=10 V | 0.152 Ω |
| Typical Gate Charge (Qg) | 31 nC |
| Input Capacitance (Ciss) typ | 1220 pF |
| Output Capacitance (Coss) typ | 220 pF |
| Power Dissipation (Pd) @ 25 °C | 50 W |
| Thermal Resistance Junction‑to‑Case | 2.5 °C/W |
| Thermal Resistance Junction‑to‑Ambient | 62.5 °C/W |
All Fairchild FQPF19N20 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQPF19N20?
The device is rated for a maximum drain‑source voltage of 200 V.
How much continuous drain current can the FQPF19N20 handle at 25 °C?
It can conduct up to 11.8 A continuously at a case temperature of 25 °C.